STB120N10F4 Datasheet, PDF (1/18 Pages) STMicroelectronics – Low gate charge

STB120N10F4,
STP120N10F4
N-channel 100 V, 8 mΩ typ., 120 A, STripFET™ DeepGATE™
2
Power MOSFETs in D PAK and TO-220 packages
Datasheet − production data
Features
TAB
3
1
D ²PAK
TAB
3
2
1
TO-220
Figure 1. Internal schematic diagram
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Order codes
V_DS
R_DS(on) max. I_D
STB120N10F4
STP120N10F4
100 V
10 mΩ
120 A
• N-channel enhancement mode
• Very low on-resistance
• Low gate charge
• 100% avalanche rated
Applications
• Switching applications
Description
These devices are N-channel Power MOSFETs
developed using ST’s STripFET™ DeepGATE™
technology. The devices have a new gate
structure and are specially designed to minimize
on-state resistance to provide superior switching
performance.
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Order codes
STB120N10F4
STP120N10F4
Table 1. Device summary
Marking
Packages
120N10F4
2
D PAK
TO-220
Packaging
Tape and reel
Tube
April 2014
This is information on a product in full production.
DocID026168 Rev 1
1/18
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