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STB120N10F4 Datasheet, PDF (4/18 Pages) STMicroelectronics – Low gate charge
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Electrical characteristics
2
Electrical characteristics
STB120N10F4, STP120N10F4
(TCASE = 25 °C unless otherwise specified)
Symbol
Parameter
Table 4. On/off states
Test conditions
Drain-source
V(BR)DSS
Breakdown voltage
Zero gate voltage
IDSS
Drain current (VGS = 0)
Gate-body leakage
IGSS
current (VDS = 0)
VGS(th) Gate threshold voltage
Static drain-source on-
RDS(on) resistance
ID = 250 μA, VGS = 0
VDS = 100 V
VDS = 100 V,TC=125 °C
VGS = ± 20 V
VDS = VGS, ID = 250 μA
VGS = 10 V, ID = 60 A
Min. Typ. Max. Unit
100
V
1 μA
100 μA
±100 nA
2
4V
8
10 mΩ
Symbol
Parameter
Ciss
Coss
Crss
Qg
Qgs
Qgd
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Table 5. Dynamic
Test conditions
VDS = 25 V, f = 1 MHz,
VGS = 0
VDD = 50 V, ID = 120 A,
VGS = 10 V
(see Figure 14)
Symbol
Parameter
Table 6. Switching times
Test conditions
td(on) Turn-on delay time
tr Rise time
td(off) Turn-off-delay time
tf Fall time
VDD = 50 V, ID = 60 A
RG = 4.7 Ω VGS = 10 V
(see Figure 13)
VDD = 50 V, ID = 60 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 13)
Min. Typ. Max. Unit
- 7290 - pF
- 568 - pF
- 387 - pF
- 131 - nC
-
40
- nC
-
37
- nC
Min. Typ. Max. Unit
-
32
- ns
- 116 - ns
- 111 - ns
-
79
- ns
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DocID026168 Rev 1
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