STB120N10F4 Datasheet, PDF (3/18 Pages) STMicroelectronics – Low gate charge

STB120N10F4, STP120N10F4
1
Electrical ratings
Electrical ratings
Symbol
Table 2. Absolute maximum ratings
Parameter
Value
V_DS Drain-source voltage
V_GS Gate-source voltage
I_D Drain current (continuous) at T_C = 25 °C
I_D Drain current (continuous) at T_C = 100 °C
(1)
I_DM
Drain current (pulsed)
P_TOT Total dissipation at T_C = 25 °C
Derating factor
(2)
E_AS Single pulse avalanche energy
T_stg Storage temperature
T_j Max. operating junction temperature
1. Pulse width limited by safe operating area
2. Starting T_j = 25 °C, I_D= 65 A, V_DD= 50 V
100
± 20
120
85
390
300
2
215
– 55 to 175
Unit
V
V
A
A
A
W
W/°C
mJ
°C
Symbol
Table 3. Thermal data
Parameter
Value
D²PAK
TO-220
R_thj-case Thermal resistance junction-case max
R_thj-pcb Thermal resistance junction-pcb max
R_thj-amb Thermal resistance junction-ambient max
0.5
35
62.5
Unit
°C/W
°C/W
°C/W
DocID026168 Rev 1
3/18
18