|
STB100N6F7 Datasheet, PDF (7/15 Pages) STMicroelectronics – High avalanche ruggedness | |||
|
◁ |
STB100N6F7
Electrical characteristics
Figure 8. Capacitance variations
&
S)
*,3*$/6
&LVV
&RVV
Figure 9. Normalized gate threshold voltage vs
temperature
9*6WK
QRUP
*,3*$/6
,' Â$
&UVV
9'69
7-Â&
Figure 10. Normalized on-resistance vs
temperature
5'6RQ
QRUP
*,3*$/6
9*6 9
Figure 11. Source-drain diode forward
characteristics
96'
*,3*$/6
9
7- Â&
7- Â&
7- Â&
7-Â&
,6'$
Figure 12. Normalized V(BR)DSS vs temperature
9%5'66
QRUP
*,3*$/6
,' P$
7-Â&
DocID027210 Rev 2
7/15
15
|
▷ |