STB100N6F7 Datasheet, PDF (3/15 Pages) STMicroelectronics – High avalanche ruggedness

STB100N6F7
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
V_DS
Drain-source voltage
V_GS
Gate-source voltage
I_D
Drain current (continuous) at T_C = 25 °C
I_D
I_DM(1)
Drain current (continuous) at T_C = 100 °C
Drain current (pulsed)
P_TOT
E_AS(2)
Total dissipation at T_C = 25 °C
Single pulse avalanche energy
T_j
Operating junction temperature
T_stg
Storage temperature
1. Pulse width is limited by safe operating area
2. Starting Tj =25 °C, I_D = 20 A, V_DD = 30 V
Value
60
± 20
100
75
400
125
200
- 55 to 175
Table 3. Thermal data
Symbol
Parameter
R_thj-case
R_thj-pcb(1)
Thermal resistance junction-case
thermal resistance junction-pcb
1. When mounted on FR-4 board of 1inch², 2oz Cu
Value
1.2
30
Unit
V
V
A
A
A
W
mJ
°C
Unit
°C/W
°C/W
DocID027210 Rev 2
3/15
15