STB100N6F7 Datasheet, PDF (4/15 Pages) STMicroelectronics – High avalanche ruggedness

Electrical characteristics
2
Electrical characteristics
(T_CASE = 25 °C unless otherwise specified)
Symbol
Parameter
Table 4. On/off states
Test conditions
V_(BR)DSS
Drain-source breakdown
voltage
V_GS = 0 V, I_D = 1 mA
Zero gate voltage
I_{DSS Drain current}
Gate-source leakage
I_{GSS current}
V_GS = 0 V, V_DS = 60 V
V_GS = 0 V, V_DS = 60 V,
T_J = 125 °C
V_DS = 0 V, V_GS = 20 V
V_GS(th)
R_DS(on)
Gate threshold voltage
Static drain-source
on-resistance
V_DS = V_GS, I_D = 250 µA
V_GS =10 V, I_D = 50 A
STB100N6F7
Min. Typ. Max. Unit
60
V
1 µA
100 µA
100 nA
2
4
V
4.7 5.6 mΩ
Symbol
Parameter
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Table 5. Dynamic
Test conditions
V_GS = 0 V, V_DS = 25V,
f = 1 MHz
V_DD = 30 V, I_D = 100 A,
V_GS = 10 V
Min. Typ. Max. Unit
- 1980 - pF
-
970
-
pF
-
86
- pF
-
30
- nC
- 12.6 - nC
-
5.9
- nC
Symbol
Parameter
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Table 6. Switching times
Test conditions
V_DD = 30 V, I_D = 50 A,
R_G = 4.7 Ω, V_GS = 10 V
Min.
-
-
-
-
Typ.
21.6
55.5
28.6
15
Max. Unit
- ns
- ns
- ns
- ns
4/15
DocID027210 Rev 2