STB100N6F7 Datasheet, PDF (1/15 Pages) STMicroelectronics – High avalanche ruggedness

STB100N6F7
N-channel 60 V, 4.7 mΩ typ.,100 A STripFET™ F7
Power MOSFET in a D²PAK package
Datasheet - production data
Features
Order code V_DS R_DS(on) max. I_D P_TOT
7$%
STB100N6F7 60 V 5.6 mΩ 100A 125 W


'3$.
Figure 1. Internal schematic diagram
'7$%
*
• Among the lowest R_DS(on) on the market
• Excellent figure of merit (FoM)
• Low C_rss/C_iss ratio for EMI immunity
• High avalanche ruggedness
Applications
• Switching applications
Description
This N-channel Power MOSFET utilizes
STripFET™ F7 technology with an enhanced
trench gate structure that results in very low on-
state resistance, while also reducing internal
capacitance and gate charge for faster and more
efficient switching.
6
Order code
STB100N6F7
$0Y
Table 1. Device summary
Marking
Package
100N6F7
D²PAK
Packaging
Tape and Reel
January 2015
This is information on a product in full production.
DocID027210 Rev 2
1/15
www.st.com