PD85035-E Datasheet, PDF (7/15 Pages) STMicroelectronics – RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

PD85035-E, PD85035S-E
Typical performance
Figure 7. Pout & Id vs. V_GS
Figure 8. Pout & Id vs. V_GS
20
5
Freq = 870 MHz
18
Vdd = 13.6V
4.5
16
Pin = 200mW
4
14
3.5
12
3
10
2.5
8
Pout Id
2
6
1.5
4
1
2
0.5
0
0
0
1
2
3
4
5
6
Vgs (V)
30
6
Freq = 870 MHz
Vdd = 13.6V
25
Pin = 400mW
5
20
4
15
3
Pout Id
10
2
5
1
0
0
0
1
2
3
4
5
6
Vgs (V)
Figure 9. Gain vs Pout & Bias current
Figure 10. Gain & Efficiency vs Pout
22
20
100
Gain
Ef f
19
90
20
Freq = 870 MHz
18
80
Vdd = 13.6V
17
70
18
16
60
16
15
50
14
12
Idq = 150mA
Idq = 350mA
Idq = 500mA
10
0
10
20
30
40
50
60
Pout (W)
14
40
13
Freq = 870 MHz
30
12
Vdd = 13.6V
20
Idq = 350mA
11
10
10
0
0
5 10 15 20 25 30 35 40 45 50
Pout (W)
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