PD85035-E Datasheet, PDF (1/15 Pages) STMicroelectronics – RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

PD85035-E
PD85035S-E
RF POWER transistor, LDMOST plastic family
N-Channel enhancement-mode lateral MOSFETs
Target Specification
Features
■ Excellent thermal stability
■ Common source configuration
■ P_OUT = 35W with 14.9dB gain @ 870MHz /
13.6V
■ Plastic package
■ ESD protection
■ In compliance with the 2002/93/EC european
directive
PowerSO-10RF
(formed lead)
Description
The PD85035-E is a common source N-Channel,
enhancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broadband
commercial and industrial applications. It
operates at 13.6V in common source mode at
frequencies of up to 1 GHz. PD85035-E boasts
the excellent gain, linearity and reliability of ST’s
latest LDMOS technology mounted in the first true
SMD plastic RF power package, PowerSO-10RF.
PD85035-E’s superior linearity performance
makes it an ideal solution for car mobile radio.
The PowerSO-10 plastic package, designed to
offer high reliability, is the first ST JEDEC
approved, high power SMD package. It has been
specially optimized for RF needs and offers
excellent RF performances and ease of assembly.
Mounting recommendations are available in
www.st.com/rf/ (look for application note AN1294)
PowerSO-10RF
(straight lead)
Figure 1. Pin connection
Source
Gate
Drain
Table 1. Device summary
Part number
PD85035-E
PD85035S-E
PD85035TR-E
PD85035STR-E
Package
PowerSO-10RF (formed lead)
PowerSO-10RF (straight lead)
PowerSO-10RF (formed lead)
PowerSO-10RF (straight lead)
Packing
Tube
Tube
Tape and reel
Tape and reel
May 2007
Rev 1
This is preliminary information on a new product foreseen to be developed. Details are subject to change without notice.
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www.st.com
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