PD85035-E Datasheet, PDF (3/15 Pages) STMicroelectronics – RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

PD85035-E, PD85035S-E
1
Electrical data
1.1
Maximum ratings
Table 2. Absolute maximum ratings (T_CASE = 25°C)
Symbol
Parameter
V_(BR)DSS
V_GS
I_D
P_DISS
T_J
T_STG
Drain-source voltage
Gate-source voltage
Drain current
Power dissipation (@ T_C = 70°C)
Max. operating junction temperature
Storage temperature
1.2
Thermal data
Table 3. Thermal data
Symbol
Parameter
R_thJC
Junction - case thermal resistance
Electrical data
Value
Unit
40
V
-0.5 to +15
V
8
A
95
W
165
°C
-65 to +150
°C
Value
1.0
Unit
°C/W
3/15