PD85035-E Datasheet, PDF(4/15 Page) STMicroelectronics – RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

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PD85035-E Datasheet, PDF (4/15 Pages) STMicroelectronics – RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

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Electrical characteristics

PD85035-E, PD85035S-E

2.1

TCASE = +25 oC

Static

Table 4. Static

Symbol

IDSS

IGSS

VGS(Q)

VDS(ON)

CISS

COSS

CRSS

VGS = 0V

VGS = 20V

VDS = 10V

VGS = 10V

VGS = 0V

Test conditions

VDS = 25V

VDS = 0V

ID = TBDmA

ID = 3A

VDS = 12.5V

f = 1MHz

Min Typ Max Unit

1 ÂµA

TBD

0.64 0.7 V

1.4

2.2

Dynamic

Table 5. Dynamic

Symbol

Test conditions

P3dB VDD = 13.6V, IDQ = 350mA

f = 870MHz

VDD = 13.6V, IDQ = 350mA, POUT = 15W, f = 870MHz

VDD = 13.6V, IDQ = 350mA, POUT = P3dB, f = 870MHz

Load VDD = 17V, IDQ = 350mA, POUT = 50W, f = 870MHz

mismatch All phase angles

Min. Typ. Max. Unit

35 40

15 17

60 72

20:1

VSWR

2.3

ESD protection characteristics

Table 6.

ESD protection characteristics

Test conditions

Human body model

Machine model

Class

2.4

Moisture sensitivity level

Table 7.

Moisture sensitivity level

Test methodology

J-STD-020B

Rating

MSL 3

4/15

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