STM32F302X6 Datasheet, PDF (61/138 Pages) STMicroelectronics – Reset and power management

STM32F302x6 STM32F302x8
Electrical characteristics
6.3.4
Embedded reference voltage
The parameters given in Table 26 are derived from tests performed under ambient
temperature and V_DD supply voltage conditions summarized in Table 22.
Symbol
Table 26. Embedded internal reference voltage
Parameter
Conditions
Min Typ Max Unit
V_REFINT
T_{S_vrefint}
V_RERINT
T_Coeff
Internal reference voltage
ADC sampling time when
reading the internal
reference voltage
Internal reference voltage
spread over the
temperature range
Temperature coefficient
–40 °C < T_A < +105 °C
-
V_DD = 3 V ±10 mV
-
1.20 1.23 1.25 V
2.2 -
-
µs
-
- ₁₀⁽¹⁾ mV
-
-
100 _ppm/°
(1)
C
1. Guaranteed by design.
Table 27. Internal reference voltage calibration values
Calibration value name
Description
Memory address
V_{REFINT_CAL}
Raw data acquired at
temperature of 30 °C
V_DDA= 3.3 V
0x1FFF F7BA - 0x1FFF F7BB
6.3.5
Note:
Supply current characteristics
The current consumption is a function of several parameters and factors such as the
operating voltage, ambient temperature, I/O pin loading, device software configuration,
operating frequencies, I/O pin switching rate, program location in memory and executed
binary code.
The current consumption is measured as described in Figure 12: Current consumption
measurement scheme.
All Run-mode current consumption measurements given in this section are performed with a
reduced code that gives a consumption equivalent to CoreMark code.
The total current consumption is the sum of I_DD and I_DDA.
DocID025147 Rev 6
61/138
117