STE250N06 Datasheet, PDF (6/8 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE

STE250N06
Cross-over Time
Source-drain Diode Forward Characteristics
Fig. 1: Switching Times Test Circuits For
Resistive Load
Fig. 2: Gate Charge Test Circuit
Fig. 3: Test Circuit For Inductive Load Switching
And Diode Recovery Times
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