STE250N06 Datasheet, PDF (3/8 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE

STE250N06
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING OFF
Symbol
tr(Voff)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 40 V ID = 250 A
RG = 4.7 Ω VGS = 10 V
(see test circuit, figure 3)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM(•)
Source-drain Current
Source-drain Current
(pulsed)
VSD (∗) Forward On Voltage
ISD = 250 A VGS = 0
trr
Reverse Recovery
Time
Qrr Reverse Recovery
Charge
ISD = 250 A
di/dt = 100 A/µs
VDD = 25 V Tj = 150 ^oC
(see test circuit, figure 3)
IRRM
Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Min.
Typ.
140
745
1000
Max.
Unit
ns
ns
ns
Min.
Typ.
Max.
250
750
Unit
A
A
1.6
V
210
ns
1.31
µC
12.5
A
Safe Operating Area
Thermal Impedance
3/8