STE250N06 Datasheet, PDF (2/8 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE

STE250N06
THERMAL DATA
Rthj-case
Rthc-h
Thermal Resistance Junction-case
Thermal Resistance Case-heatsink With Conductive
Grease Applied
Max
Max
0.27
0.05
o_C/W
o_C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 ^oC unless otherwise specified)
OFF
Symbol
V(BR)DSS
IDSS
IGSS
Parameter
Test Conditions
Drain-source
Breakdown Voltage
ID = 1 mA VGS = 0 V
Zero Gate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating x 0.8 Tc = 125 ^oC
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
Min.
60
Typ.
Max.
Unit
V
400 µA
2
mA
± 400 nA
ON (∗)
Symbol
VGS(th)
RDS(on)
Parameter
Test Conditions
Gate Threshold Voltage VDS = VGS ID = 1 mA
Static Drain-source On VGS = 10V ID = 125 A
Resistance
Min.
2
Typ.
Max.
4
0.004
Unit
V
Ω
DYNAMIC
Symbol
gfs (∗)
Ciss
Coss
Crss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS = 15 V ID = 125 A
Min.
100
Typ.
Max.
Unit
S
VDS = 25 V f = 1 MHz VGS = 0 V
25
nF
10000 pF
3000 pF
SWITCHING ON
Symbol
td(on)
tr
(di/dt)on
Qg
Parameter
Turn-on Time
Rise Time
Turn-on Current Slope
Total Gate Charge
Test Conditions
VDD = 25 V ID = 125 A
RG = 4.7 Ω VGS = 10 V
(see test circuit, figure 1)
VDD = 40 V ID = 250 A
RG = 4.7 Ω VGS = 10 V
(see test circuit, figure 3)
VDD = 40 V
VGS = 10 V
ID = 250 A
Min.
Typ.
95
300
Max.
Unit
ns
ns
440
A/µs
475
nC
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