STE250N06 Datasheet, PDF (1/8 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE

STE250N06
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR IN ISOTOP PACKAGE
TYPE
STE250N06
VDSS
60 V
RDS(on)
< 0.004 Ω
ID
250 A
s HIGH CURRENT POWER MODULE
s AVALANCHE RUGGED TECHNOLOGY
(SEE STH80N06 FOR RATING)
s VERY LARGE SOA - LARGE PEAK POWER
CAPABILITY
s EASY TO MOUNT
s SAME CURRENT CAPABILITY FOR THE
TWO SOURCE TERMINALS
s EXTREMELY LOW Rth JUNCTION TO CASE
s VERY LOW DRAIN TO CASE CAPACITANCE
s VERY LOW INTERNAL PARASITIC
INDUCTANCE (TYPICALLY < 5 nH)
s ISOLATED PACKAGE UL RECOGNIZED
(FILE No E81743)
INDUSTRIAL APPLICATIONS:
s SMPS & UPS
s MOTOR CONTROL
s WELDING EQUIPMENT
s OUTPUT STAGE FOR PWM, ULTRASONIC
CIRCUITS
1
2
4
3
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-Source Voltage (VGS = 0)
VDGR Drain-Gate Voltage (RGS = 20 kΩ)
VGS Gate-Source Voltage
ID
Drain Current (continuous) at Tc = 25 ^oC
ID
Drain Current (continuous) at Tc = 100 ^oC
IDM(•) Drain Current (pulsed)
Ptot Total Dissipation at Tc = 25 ^oC
Derating Factor
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
VISO Insulation Withstand Voltage (AC-RMS)
(•) Pulse width limited by safe operating area
May 1995
Value
60
60
± 20
250
155
750
450
3.6
-55 to 150
150
2500
Unit
V
V
V
A
A
A
W
W/^oC
o_C
o_C
V
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