STD2NK90Z_06 Datasheet, PDF (6/18 Pages) STMicroelectronics – N-channel 900V - 5Ω - 2.1A - TO-220 /DPAK/IPAK Zener-Protected SuperMESH™ MOSFET

Electrical characteristics
STP2NK90Z - STD2NK90Z - STD2NK90Z-1
Table 8. Source drain diode
Symbol
Parameter
Test condictions
Min Typ. Max Unit
I_SD Source-drain current
I_SDM(1) Source-drain current (pulsed)
V_SD(2) Forward on voltage
I_SD = 2.1 A, V_GS = 0
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 2 A, di/dt = 100 A/µs
V_DD = 50V
(see Figure 20)
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 2 A, di/dt = 100 A/µs
V_DD = 50V, T_j = 150°C
(see Figure 20)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
2.1 A
8.4 A
1.6 V
415
ns
1.5
µC
7.2
A
515
ns
1.9
µC
7.5
A
6/18