 English |
|
|
|
|
|
|
|
| STD2NK90Z_06 Datasheet, PDF (4/18 Pages) STMicroelectronics – N-channel 900V - 5Ω - 2.1A - TO-220 /DPAK/IPAK Zener-Protected SuperMESH™ MOSFET | |||
| |||
| ◁ |
Electrical ratings
STP2NK90Z - STD2NK90Z - STD2NK90Z-1
Table 4. Gate-source zener diode
Symbol
Parameter
BVGSO Gate-source breakdown voltage
Test conditions
Min. Typ. Max. Unit
Igs=± 1mA (open drain) 30
V
1.1
Protection features of gate-to-source zener diodes
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the deviceâs ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the deviceâs
integrity. These integrated Zener diodes thus avoid the usage of external components.
4/18
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese