STD2NK90Z_06 Datasheet, PDF (3/18 Pages) STMicroelectronics – N-channel 900V - 5Ω - 2.1A - TO-220 /DPAK/IPAK Zener-Protected SuperMESH™ MOSFET

STP2NK90Z - STD2NK90Z - STD2NK90Z-1
1
Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
V_DS
V_DGR
V_GS
I_D
I_D
I_DM ⁽¹⁾
P_TOT
Drain-source voltage (V_GS = 0)
Drain-gate voltage (R_GS = 20 kΩ)
Gate- source Voltage
Drain current (continuous) at T_C = 25°C
Drain current (continuous) at T_C = 100°C
Drain current (pulsed)
Total dissipation at T_C = 25°C
Derating factor
V_ESD(G-S)
Gate source ESD(HBM-C=100pF,
R=1.5KΩ)
dv/dt ⁽²⁾ Peak diode recovery voltage slope
T_j
Operating junction temperature
T_stg Storage temperature
1. Pulse width limited by safe operating area
2. I_SD ≤2.1A, di/dt ≤200A/µs, V_DD ≤V_(BR)DSS, T_j ≤T_JMAX.
Value
STP2NK90Z
STD2NK90Z
STD2NK90Z-1
900
900
± 30
2.1
1.3
8.4
70
0.56
2000
4.5
-55 to 150
-55 to 150
Unit
V
V
V
A
A
A
W
W/°C
V
V/ns
°C
°C
Table 2. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-ambient max
T_l
Maximum lead temperature for soldering purpose
Table 3. Avalanche characteristics
Symbol
Parameter
Avalanche current, repetitive or not-repetitive
I_AR
(pulse width limited by T_j max)
Single pulse avalanche energy
E_AS
(starting T_j = 25 °C, I_D = I_AR, V_DD = 50 V)
Value
1.78
62.5
300
Unit
°C/W
°C/W
°C
Value
Unit
2.1
A
150
mJ
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