STD2NK90Z_06 Datasheet, PDF (5/18 Pages) STMicroelectronics – N-channel 900V - 5Ω - 2.1A - TO-220 /DPAK/IPAK Zener-Protected SuperMESH™ MOSFET

STP2NK90Z - STD2NK90Z - STD2NK90Z-1
2
Electrical characteristics
Electrical characteristics
(T_CASE=25°C unless otherwise specified)
Table 5. On/off states
Symbol
Parameter
V_(BR)DSS
Drain-source breakdown
Voltage
I_DSS
I_GSS
V_GS(th)
R_DS(on
Zero gate voltage
Drain current (V_GS = 0)
Gate-body Leakage
current (V_DS = 0)
Gate threshold voltage
Static drain-source on
resistance
Test condictions
Min. Typ. Max. Unit
I_D = 1 mA, V_GS = 0
900
V_DS = Max Rating
V_DS = Max Rating, T_C = 125°C
V
1 µA
50 µA
V_GS = ± 20 V
± 10 µA
V_DS = V_GS, I_D = 50 µA
V_GS = 10 V, I_D = 1.05 A
3 3.75 4.5 V
5 6.5 Ω
Table 6. Dynamic
Symbol
Parameter
Test condictions
Min. Typ. Max. Unit
g_fs ⁽¹⁾ Forward transconductance ^V_DS ^{= 15 V , I}_D ^{= 1.05 A}
2.3
S
C_iss
C_oss
C_rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V_DS = 25 V, f = 1 MHz,
V_GS = 0
485
pF
50
pF
10
pF
C_oss
(2)
eq .
Equivalent output
capacitance
V_GS = 0 V, V_DS = 0 to 720 V
24
pF
Q_{g Total gate charge}
Q_gs Gate-source charge
Q_gd Gate-drain charge
V_DD = 720 V, I_D = 2 A,
V_GS = 10 V
(see Figure 22)
19.5 27 nC
3.4
nC
10.8
nC
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. C_{oss eq.} is defined as a constant equivalent capacitance giving the same charging time as C_oss when V_DS
inceases from 0 to 80% V_DSS
Table 7. Switching times
Symbol
Parameter
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test condictions Min. Typ. Max. Unit
V_DD = 450 V, I_D = 1 A,
21
ns
11
ns
R_G = 4.7 Ω, V_GS = 10 V
43
ns
(see Figure 19)
40
ns
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