STD11NM60N-1_08 Datasheet, PDF (6/21 Pages) STMicroelectronics – N-channel 600 V - 0.37 Ω - 10 A - TO-220 - TO-220FP- I2PAK - IPAK DPAK - D2PAK second generation MDmesh™ Power MOSFET

Electrical characteristics
STD11NM60N/-1 - STB11NM60N/-1 - STF11NM60N - STP11NM60N
Table 7. Switching times
Symbol
Parameter
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
V_DD = 300 V, I_D = 5 A,
R_G = 4.7 Ω, V_GS = 10 V
(see Figure 18)
(see Figure 23)
Min. Typ. Max. Unit
22
ns
18.5
ns
50
ns
12
ns
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
I_SD
I_SDM
V_SD(1)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
I_SD = 10 A, V_GS=0
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD =10 A, di/dt =100 A/µs,
V_DD =100 V
(see Figure 20)
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
V_DD =100 V
di/dt =100 A/µs, I_SD = 10 A
T_J = 150 °C (see Figure 20)
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
10 A
40 A
1.3 V
340
ns
3.26
µC
19.2
A
460
ns
4.42
µC
19.2
A
6/21