STD11NM60N-1_08 Datasheet, PDF (5/21 Pages) STMicroelectronics – N-channel 600 V - 0.37 Ω - 10 A - TO-220 - TO-220FP- I2PAK - IPAK DPAK - D2PAK second generation MDmesh™ Power MOSFET

STD11NM60N/-1 - STB11NM60N/-1 - STF11NM60N - STP11NM60N
2
Electrical characteristics
Electrical characteristics
(T_CASE=25°C unless otherwise specified)
Table 5. On/off states
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
V_(BR)DSS
Drain-source breakdown
voltage
I_D = 1 mA, V_GS= 0
600
dv/dt⁽¹⁾
Drain-source voltage slope
V_DD = 400 V,I_D = 5 A,
V_GS =10 V
I_DSS
Zero gate voltage drain
current (V_GS = 0)
V_DS = Max rating,
V_DS=Max rating,Tc=125 °C
I_GSS
Gate body leakage current
(V_DS = 0)
V_GS = ±20 V
V_GS(th) Gate threshold voltage
V_DS= V_GS, I_D = 250 µA
2
R_DS(on)
Static drain-source on
resistance
V_GS= 10 V, I_D= 5 A
45
3
0.37
V
V/ns
1 µA
10 µA
±100 nA
4
V
0.45 Ω
1. Characteristic value at turn off on inductive load
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
g_fs(1)
C_iss
C_oss
C_rss
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
V_DS =15 V, I_D= 5 A
V_DS =50 V, f=1 MHz,
V_GS=0
7.5
S
850
pF
44
pF
5
pF
C_oss
(2)
eq.
Equivalent output
capacitance
V_GS=0, V_DS =0 to 480 V
130
pF
f=1 MHz Gate DC Bias=0
Rg Gate input resistance
Test signal level=20 mV
3.7
Ω
open drain
Q_g Total gate charge
Q_gs Gate-source charge
Q_gd Gate-drain charge
V_DD=480 V, I_D = 10 A
V_GS =10 V
(see Figure 19)
31
nC
4.2
nC
15.9
nC
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
2. C_{oss eq.} is defined as a constant equivalent capacitance giving the same charging time as C_oss when V_DS
increases from 0 to 80% V_DSS
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