STD11NM60N-1_08 Datasheet, PDF (3/21 Pages) STMicroelectronics – N-channel 600 V - 0.37 Ω - 10 A - TO-220 - TO-220FP- I2PAK - IPAK DPAK - D2PAK second generation MDmesh™ Power MOSFET

STD11NM60N/-1 - STB11NM60N/-1 - STF11NM60N - STP11NM60N
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
V_DS Drain-source voltage (V_GS = 0)
V_GS Gate-source voltage
I_D
Drain current (continuous) at T_C = 25 °C
I_D
Drain current (continuous) at T_C = 100 °C
I_DM ⁽²⁾ Drain current (pulsed)
P_TOT Total dissipation at T_C = 25 °C
Derating factor
dv/dt ^{(3) Peak diode recovery voltage slope}
V_ISO
T_stg
Insulation withstand voltage (RMS) from all three
leads to external heat sink (t = 1 s;T_C = 25 °C)
Storage temperature
T_J
Max. operating junction temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I_SD ≤10 A, di/dt ≤400 A/µs, V_DD = 80% V_(BR)DSS
Value
TO-220/I²PAK
Unit
TO-220FP
D/D²PAK/IPAK
600
V
± 25
V
10
10⁽¹⁾
A
6.3
6.3 ⁽¹⁾
A
40
40⁽¹⁾
A
90
25
W
0.8
0.2 W/°C
15
V/ns
--
2500
V
-55 to 150
°C
150
°C
Table 3. Thermal data
Symbol
Parameter
Value
Unit
TO-220 I²PAK DPAK D²PAK IPAK TO-220FP
R_thj-case
R_thj-amb
R_thj-pcb
Thermal resistance
junction-case max
Thermal resistance
junction-amb max
Thermal resistance
junction-pcb max
1.38
5
°C/W
62.5
--
-- 100 62.5 °C/W
--
-- 50 30 --
--
°C/W
Maximum lead
T_l
temperature for soldering
300
°C
purposes
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