STD11NM60N-1_08 Datasheet, PDF (4/21 Pages) STMicroelectronics – N-channel 600 V - 0.37 Ω - 10 A - TO-220 - TO-220FP- I2PAK - IPAK DPAK - D2PAK second generation MDmesh™ Power MOSFET

Electrical ratings
STD11NM60N/-1 - STB11NM60N/-1 - STF11NM60N - STP11NM60N
Table 4. Avalanche characteristics
Symbol
Parameter
I_AS
Avalanche current, repetitive or not-repetitive
(pulse width limited by T_J max)
Single pulse avalanche energy
E_AS
(starting T_J = 25 °C, I_D = I_AS, V_DD = 50 V)
Max value
Unit
3.5
A
200
mJ
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