STB85NS04Z Datasheet, PDF (6/15 Pages) STMicroelectronics – Low capacitance and gate charge

Electrical characteristics
STB85NS04Z - STB85NS04Z-1
Table 6. Switching times
Symbol
Parameter
t_r(Voff)
t_f
t_c
Off-voltage rise time
Fall time
Cross-over time
Test conditions
V_clamp=30V, I_D=60A
R_G=4.7Ω, V_GS=10V
(see Figure 15)
Min. Typ. Max. Unit
85
ns
145
ns
90
ns
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min Typ. Max Unit
I_SD
) _ISDM
Source-drain current
Source-drain current (pulsed)
t(s _{VSD(1) Forward on voltage}
I_SD=60A, V_GS=0
uc _trr
rod ^{) Qrr}
P _t(s ^IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD=60A,V_DD=100V
di/dt=25A/µs,Tj=150°C
(see Figure 18)
O_O^b_b^s_s^o_o^l_l^e_e^t_t^ee ^{PPrroodduucctt((ss)) -- OObbssoolleettee Produc 1. Pulsed: pulse duration = 300µs, duty cycle 1.5%}
80 A
320 A
1.5 V
65
ns
0.15
µC
4.5
A
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