STB85NS04Z Datasheet, PDF (5/15 Pages) STMicroelectronics – Low capacitance and gate charge

STB85NS04Z - STB85NS04Z-1
2
Electrical characteristics
Electrical characteristics
(T_CASE=25°C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
V_(BR)DSS
Drain-source breakdown
voltage
I_D = 1mA, V_GS= 0
33
V
I_DSS
Zero gate voltage drain
current (V_GS = 0)
t(s) ^IGSS
duc ^VGSS
Gate body leakage current
(V_DS = 0)
Gate-source breakdown
voltage
Pro _t(s) ^{RG Series gate resistance}
te ^{c VGS(th)}
le du R_DS(on)
Gate threshold voltage
Static drain-source on
resistance
V_DS = 16V,
V_DS = 16V, Tc=125°C
V_GS = ±10V
I_GS = 100µA
V_DS= V_GS, I_D = 1mA
V_GS= 10V, I_D= 30A
10 µA
100 µA
10 µA
18
25 V
14
Ω
2
3
4
V
11 15 mΩ
- ^{Obso te Pro Table 5. Dynamic}
) ^{le Symbol}
Parameter
Test conditions
t(s ^{so gfs}
uc _Ob ^C_iss
d _{- Coss}
Pro _t(s) ^Crss
te ^{c Qg}
le ^{u Qgs}
O_O^b_b^s_s^o_olete ^{Prod Qgd}
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
V_DS = 25V, I_D= 30A
V_DS =25V, f=1MHz, V_GS=0
V_DD=16V, I_D = 60A
V_GS =10V
(see Figure 14)
Min. Typ. Max. Unit
50
S
2500
pF
800
pF
150
pF
68 100 nC
15
nC
19
nC
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