STB85NS04Z Datasheet, PDF (1/15 Pages) STMicroelectronics – Low capacitance and gate charge

STB85NS04Z
STB85NS04Z-1
N-channel 11mΩ - 80A - D²PAK - I²PAK
SAFeFET™ Power MOSFET
General features
Type
V_DSS
R_DS(on)
I_D
STB85NS04Z
) STB85NS04Z-1
Clamped
Clamped
< 0.015Ω 80A⁽¹⁾
< 0.015Ω 80A⁽¹⁾
t(s ^{1. Current limited by wire bonding}
uc ^{■ 100% avalanche tested}
d _{■ Low capacitance and gate charge}
Pro _t(s) ^{■ 175°C maximum junction temperature}
lete ^{uc Description}
so ^{rod This fully clamped Power MOSFET is produced}
by using the latest advanced Company’s Mesh
b ^P _{Overlay™ process which is based on a novel strip}
- ^{O te layout. The inherent benefits of the new}
) ^{le technology coupled with the extra clamping}
t(s ^{o capabilities make this product particularly suitble}
s _{for the harshest operation conditions such as}
c ^b _{those encountered inthe automotive environment.}
u _{O Any other application requiring extra ruggedness}
rod ^{- is also recommended.}
te ^{P ct(s) Applications}
le du ^{■ Switching application}
so ^{ro – Automotive}
123
I²PAK
3
1
D²PAK
Internal schematic diagram
Ob _te ^P _{Order codes}
ole_{Part number}
Obs^STB85NS04ZT4
Marking
B85NS04Z
Package
D²PAK
Packaging
Tape &reel
STB85NS04Z-1
B85NS04Z-1
I²PAK
Tube
September 2006
Rev 1
1/15
www.st.com
15