STB85NS04Z Datasheet, PDF (3/15 Pages) STMicroelectronics – Low capacitance and gate charge

STB85NS04Z - STB85NS04Z-1
1
Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
Value
Unit
V_DS
Drain-source voltage (V_GS=0)
33 ⁽¹⁾
V
V_GS
Gate-source voltage
± 18
V
I_D
Drain current (continuous) at T_C = 25°C
80 ⁽²⁾
A
I_D
Drain current (continuous) at T_C = 100°C
) I_DG
Drain gate current (continuous)
t(s I_GS
Gate source current (continuous)
uc _IDM (3) _{Drain current (pulsed)}
rod ^{) Derating factor}
P _{t(s PTOT Total dissipation at TC = 25°C}
lete ^{uc VESD(G-S) Gate-source ESD (HBM-C=100pF, R=1.5kΩ)}
so ^{rod VESD(G-D) Gate-drain ESD (HBM-C=100pF, R=1.5kΩ)}
b ^{P V}ESD(D-S) ^{Drain-source ESD (HBM-C=100pF, R=1.5kΩ)}
- ^{O te Tj}
Operating junction temperature
) ^le _Tstg
Storage temperature
t(s ^so 1. Voltage is limited by zener diodes
c ^b _{2. Current limited by wire bonding}
du _- ^O 3. Pulse width limited by safe operating area
Pro _{t(s) Table 2. Thermal data}
lete duc Symbol
Parameter
bso Pro _{Rthj-case Thermal resistance junction-case max}
O _{teRthj-pcb (1) Thermal resistance junction-pcb max}
le_{Rthj-amb Thermal resistance junction-amb max}
Obso ^Tl
Maximum lead temperature for soldering
purpose
60
± 50
± 50
320
1.43
215
2
4
4
-55 to 175
Value
D²PAK
I²PAK
0.7
35
--
62.5
300
A
mA
mA
A
W/°C
W
kV
kV
kV
°C
Unit
°C/W
°C/W
°C/W
°C
1. When mounted on 1inch² FR-4 board, 2 oz Cu
3/15