STB3NA60-1 Datasheet, PDF (6/9 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

STB3NA60-1
Switching Safe Operating Area
Accidental Overload Area
Source-drain Diode Forward Characteristics
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
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