STB3NA60-1 Datasheet, PDF (1/9 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

STB3NA60-1
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
TYPE
ST B3NA60-1
VDSS
600 V
RDS(on)
<4Ω
ID
2.9 A
PRELIMINARY DATA
s TYPICAL RDS(on) = 0.7 Ω
s AVALANCHE RUGGED TECHNOLOGY
s ± 30V GATE TO SOURCE VOLTAGE RATING
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100^oC
s LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
123
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-DC & DC-AC CONVERTERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
I2PAK
TO-262
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS Drain-source Voltage (V_GS = 0)
VDGR Drain- gate Voltage (RGS = 20 kΩ)
V_GS Gate-source Voltage
I_D
Drain Current (continuous) at T_c = 25 ^oC
ID
Drain Current (continuous) at Tc = 100 ^oC
IDM(•)
P_tot
Drain Current (pulsed)
Total Dissipation at T_c = 25 ^oC
Derating Factor
Tstg St orage Temperature
Tj
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
March 1996
Value
600
600
± 30
2.9
1.8
11.6
80
0.64
-65 to 150
150
Uni t
V
V
V
A
A
A
W
W/^oC
o_C
o_C
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