STB3NA60-1 Datasheet, PDF (2/9 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

STB3NA60-1
THERMAL DATA
R_{t hj-ca se}
R_{t hj- amb}
R_{t hj- amb}
Tl
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Maximum Lead T emperature For Soldering Purpose
Max
Max
Typ
1.56
62.5
0.5
300
o_C/W
o_C/W
o_C/W
o_C
AVALANCHE CHARACTERISTICS
Symb ol
IAR
E _AS
EAR
I_AR
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T_j max, δ < 1%)
Single Pulse Avalanche Energy
(starting T_j = 25 ^oC, I_D = I_AR, V_DD = 50 V)
Repetitive Avalanche Energy
(pulse width limited by Tj max, δ < 1%)
Avalanche Current, Repetitive or Not-Repetitive
(Tc = 100 ^oC, pulse width limited by Tj max, δ < 1%)
Max Value
2.9
42
1.6
1.8
Unit
A
mJ
mJ
A
ELECTRICAL CHARACTERISTICS (Tcase = 25 ^oC unless otherwise specified)
OFF
Symb ol
V(BR)DSS
IDSS
IGSS
P a ram et er
Test Conditions
Dr ain - s o ur c e
Breakdown Voltage
ID = 250 µA
VGS = 0
Zero Gate Voltage
VDS = Max Rating
Drain Current (V_GS = 0) V_DS = Max Rating x 0. 8 T_c = 125 ^oC
Gate-body Leakage
Current (V_DS = 0)
VGS = ± 30 V
Min.
600
Typ .
M a x.
250
1000
± 100
Unit
V
µA
µA
nA
ON (∗)
Symb ol
V _{GS(th )}
RDS( o n )
I_{D(o n)}
P a ram et er
Test Conditions
Gate T hreshold Voltage V_DS = V_GS I_D = 250 µA
St atic Drain-source On VGS = 10 V ID = 1. 5 A
Re s is ta nc e
V_GS = 10 V I_D = 1.5 A T_C = 100 ^oC
On State Drain Current V_DS > I_D(on) x R_DS(on)max V_GS = 10 V
Min.
2.25
2.9
Typ .
3
3.3
M a x.
3.75
4
8
Unit
V
Ω
A
DYNAMIC
Symb ol
gfs (∗)
C_iss
Coss
C_rss
P a ram et er
Forward
T r ans c on duc ta nc e
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max ID = 1.5 A
Min.
1
Typ .
2
M a x.
Unit
S
V_DS = 25 V f = 1 MHz V_GS = 0
380 500 pF
57
75
pF
17
23
pF
2/9