STB18N60M2 Datasheet, PDF (6/21 Pages) STMicroelectronics – Low gate input resistance

Electrical characteristics
STB18N60M2, STP18N60M2, STW18N60M2
2.1
Electrical characteristics (curves)
Figure 2. Safe operating area for D²PAK and
TO-220
ID
AM15835v1
(A)
Figure 3. Thermal impedance for D²PAK,
TO-220 and TO-247
10
10µs
100µs
1
0.1
0.1
1
Tj=150°C
Tc=25°C
Single
pulse
10
100
1ms
10ms
VDS(V)
Figure 4. Safe operating area for TO-247
ID
AM15836v1
(A)
10
1
0.1
0.1
1
10µs
100µs
Tj=150°C
Tc=25°C
Single
pulse
10
100
1ms
10ms
VDS(V)
Figure 5. Output characteristics
ID
AM15837v1
(A)
VGS=7, 8, 9, 10V
30
25
20
6V
15
10
5V
5
0
4V
0
5
10
15
20 VDS(V)
Figure 6. Transfer characteristics
ID (A)
30
VDS=18V
AM15838v1
25
20
15
10
5
0
0
2
4
6
8 10 VGS(V)
Figure 7. Gate charge vs gate-source voltage
VGS
(V)
12 _VV_DSDS
VDD=480V
ID=13A
AM15839v1
VDS
(V)
500
10
400
8
300
6
200
4
2
100
0
0
0
5 10 15 20 25 Qg(nC)
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