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STB18N60M2 Datasheet, PDF (4/21 Pages) STMicroelectronics – Low gate input resistance
Electrical characteristics
STB18N60M2, STP18N60M2, STW18N60M2
2
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Symbol
Parameter
Table 5. On /off states
Test conditions
Drain-source
V(BR)DSS breakdown voltage
ID = 1 mA, VGS = 0
IDSS
IGSS
VGS(th)
RDS(on)
Zero gate voltage
VDS = 600 V
drain current (VGS = 0) VDS = 600 V, TC=125 °C
Gate-body leakage
current (VDS = 0)
VGS = ± 25 V
Gate threshold voltage VDS = VGS, ID = 250 μA
Static drain-source
on-resistance
VGS = 10 V, ID = 6.5 A
Min. Typ. Max. Unit
600
V
1 μA
100 μA
±10 μA
2
3
4V
0.255 0.28 Ω
Symbol
Parameter
Table 6. Dynamic
Test conditions
Min. Typ. Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0
- 791 - pF
-
40
- pF
-
5.6
- pF
(1) Equivalent output
Coss eq. capacitance
VDS = 0 to 480 V, VGS = 0
- 164.5 - pF
Intrinsic gate
RG resistance
f = 1 MHz, ID = 0
-
5.6
-
Ω
Qg Total gate charge
VDD = 480 V, ID = 13 A,
Qgs Gate-source charge VGS = 10 V
Qgd Gate-drain charge
(see Figure 16)
- 21.5 - nC
-
3.2
- nC
- 11.3 - nC
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Table 7. Switching times
Test conditions
Min. Typ. Max. Unit
-
12
- ns
VDD = 300 V, ID = 6.5 A,
-
9
- ns
RG = 4.7 Ω, VGS = 10 V
(see Figure 15 and Figure 20) -
47
- ns
- 10.6 - ns
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