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| STB18N60M2 Datasheet, PDF (1/21 Pages) STMicroelectronics – Low gate input resistance | |||
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STB18N60M2, STP18N60M2,
STW18N60M2
N-channel 600 V, 0.255 Ω typ., 13 A MDmesh II Plus⢠low Qg
2
Power MOSFET in D PAK, TO-220 and TO-247 packages
Datasheet - production data
TAB
3
1
D2 PAK
TAB
3
2
1
TO-220
3
2
1
TO-247
Figure 1. Internal schematic diagram
, TAB
Features
Order codes
VDS @
TJmax
RDS(on)
max
ID
STB18N60M2
STP18N60M2
STW18N60M2
650 V
0.28 Ω 13 A
⢠Extremely low gate charge
⢠Lower RDS(on) x area vs previous generation
⢠Low gate input resistance
⢠100% avalanche tested
⢠Zener-protected
Applications
⢠Switching applications
⢠LLC converters, resonant converters
Description
AM15572v1
These devices are N-channel Power MOSFETs
developed using a new generation of MDmeshâ¢
technology: MDmesh II Plus⢠low Qg. These
revolutionary Power MOSFETs associate a
vertical structure to the company's strip layout to
yield one of the world's lowest on-resistance and
gate charge. They are therefore suitable for the
most demanding high efficiency converters.
Order codes
STB18N60M2
STP18N60M2
STW18N60M2
Table 1. Device summary
Marking
Package
2
D PAK
18N60M2
TO-220
TO-247
Packaging
Tape and reel
Tube
February 2014
This is information on a product in full production.
DocID024735 Rev 2
1/21
www.st.com
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