STB18N60M2 Datasheet, PDF (5/21 Pages) STMicroelectronics – Low gate input resistance

STB18N60M2, STP18N60M2, STW18N60M2
Electrical characteristics
Symbol
Table 8. Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
I_SD Source-drain current
-
(1)
I_SDM Source-drain current (pulsed)
-
(2)
V_SD Forward on voltage
I_SD = 13 A, V_GS = 0
-
13 A
52 A
1.6 V
t_rr Reverse recovery time
- 305
ns
I_SD = 13 A, di/dt = 100 A/μs
Q_rr Reverse recovery charge
V_DD = 60 V (see Figure 17)
-
3.3
μC
I_RRM Reverse recovery current
- 22
A
t_rr Reverse recovery time
- 417
I_SD = 13 A, di/dt = 100 A/μs
ns
Q_rr Reverse recovery charge V_DD = 60 V, T_j = 150 °C
- 4.6
μC
I_RRM Reverse recovery current
(see Figure 17)
- 22
A
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%
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