SD2931-10_03 Datasheet, PDF (6/16 Pages) STMicroelectronics – RF power transistors HF/VHF/UHF N-channel MOSFETs

Typical performance
4
Typical performance
SD2931-10
Figure 3.
10000
1000
100
10
0
Capacitance vs drain-source
voltage
Ciss
Coss
f =1MHz
Crss
10
20
30
40
50
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 4. Drain current vs gate voltage
20
Tc=-20 °C
15
Tc=+25 °C
10
VDS = 10 V
5
Tc=+80 °C
0
2
2.5
3
3.5
4
4.5
5
5.5
6
VGS, GATE-SOURCE VOLTAGE (V)
Figure 5. Gate-source voltage vs case
temperature
Figure 6. Maximum thermal resistance vs
case temperature
1.12
1.08
1.04
1
0.96
0.92
0.88
0.84
0.8
-25
Id =9A
Id =10A
Id =11A
Id =7A
Id =5A
Vds= 10 V
Id =.25A
Id =4A
Id =2A
Id =1A
Id =.1A
0
25
50
75
100
Tc, CASE TEMPERATURE (°C)
0.6
0.56
0.52
0.48
0.44
25
35
45
55
65
75
85
Tc, CASE TEMPERATURE (°C)
Figure 7. Safe operating area
100
10
(1)
1
1
10
100
Vds(V)
(1) Current in this area may be limited by Rds(on)
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1000