SD2931-10_03 Datasheet, PDF (1/16 Pages) STMicroelectronics – RF power transistors HF/VHF/UHF N-channel MOSFETs

SD2931-10
RF power transistors
HF/VHF/UHF N-channel MOSFETs
Features
■ Gold metallization
■ Excellent thermal stability
■ Common source configuration
■ P_OUT = 150 W min. with 14 dB gain @ 175 MHz
■ Thermally enhanced packaging for lower
junction temperatures
Description
The SD2931-10 is a gold metallized N-channel
MOS field-effect RF power transistor. Being
electrically identical to the standard SD2931
MOSFET, it is intended for use in 50 V dc large
signal applications up to 230 MHz.
The SD2931-10 is mechanical compatible to the
SD2931 but offers in addition a better thermal
capability (25 % lower thermal resistance),
representing the best-in-class transistors for ISM
applications, where reliability and ruggedness are
critical factors.
M174
Epoxy sealed
Figure 1. Pin connection
4
1
3
1. Drain
2. Source
2
3. Gate
4. Source
Table 1. Device summary
Order code
SD2931-10
Marking
SD2931-10
Package
M174
Packaging
Plastic tray
March 2008
Rev 6
1/16
www.st.com
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