SD2931-10_03 Datasheet, PDF (3/16 Pages) STMicroelectronics – RF power transistors HF/VHF/UHF N-channel MOSFETs

SD2931-10
1
Electrical data
1.1
1.2
Maximum ratings
Table 2. Absolute maximum ratings (T_CASE = 25 °C)
Symbol
Parameter
V_(BR)DSS(1)
V_DGR
V_GS
I_D
P_DISS
T_J
T_STG
Drain source voltage
Drain-gate voltage (R_GS = 1 MΩ)
Gate-source voltage
Drain current
Power dissipation
Max. operating junction temperature
Storage temperature
1. T_J = 150°C
Thermal data
Table 3. Thermal data
Symbol
Parameter
R_thJC
Junction - case thermal resistance
Electrical data
Value
Unit
125
V
125
V
±20
V
20
A
389
W
200
°C
-65 to +150
°C
Value
0.45
Unit
°C/W
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