SD2931-10_03 Datasheet, PDF (4/16 Pages) STMicroelectronics – RF power transistors HF/VHF/UHF N-channel MOSFETs

Electrical characteristics (TCASE = +25 ºC)
SD2931-10
2
Electrical characteristics (T_CASE = +25 ºC)
2.1
Static
Table 4. Static (per side)
Symbol
Test conditions
V_(BR)DSS V_GS = 0 V
I_DS = 100 mA
I_DSS
V_GS = 0 V
V_DS = 50 V
I_GSS V_GS = 20 V
V_GS(Q) ⁽¹⁾ V_DS = 10 V
V_DS = 0 V
I_D = 250 mA
V_DS(ON) V_GS = 10 V
I_D = 10 A
G_FS
V_DS = 10 V
I_D = 5 A
C_ISS V_GS = 0 V
V_DS = 50 V
C_OSS V_GS = 0 V
V_DS = 50 V
C_RSS V_GS = 0 V
V_DS = 50 V
1. V_GS(Q) sorted with alpha/numeric code marked on unit.
f = 1 MHz
f = 1 MHz
f = 1 MHz
Min Typ Max Unit
125
V
50 µA
250 nA
See table below
V
3.0 V
5
6
mho
480
pF
190
pF
18
pF
2.2
Dynamic
Table 5. Dynamic
Symbol
Test conditions
Min Typ Max Unit
P_OUT V_DD = 50 V I_DQ = 250 mA
f = 175 MHz 150
G_PS V_DD = 50 V I_DQ = 250 mA P_{OUT =} 150 W f = 175 MHz 14 15
n_D
V_DD = 50 V I_DQ = 250 mA P_OUT = 150 W f = 175 MHz 55 65
Load ^V_DD ^{= 50 V I}_DQ ^{= 250 mA P}_{OUT =} ^{150 W f = 175 MHz}
mismatch _{All phase angles}
10:1
W
dB
%
VSWR
Table 6. V_GS sorts
A
2.0 - 2.1
K
2.9 - 3.0
B
2.1 - 2.2
L
3.0 - 3.1
C
2.2 - 2.3
M
3.1 - 3.2
D
2.3 - 2.4
N
3.2 - 3.3
E
2.4 - 2.5
P
3.3 - 3.4
F
2.5 - 2.6
Q
3.4 - 3.5
G
2.6 - 2.7
R
3.5 - 3.6
H
2.7 - 2.8
S
3.6 - 3.7
J
2.8 - 2.9
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