ST92F124 Datasheet, PDF (57/426 Pages) STMicroelectronics – 8/16-BIT SINGLE VOLTAGE FLASH MCU FAMILY WITH RAM, E3 TMEMULATED EEPROM, CAN 2.0B AND J1850 BLPD

ST92F124/F150/F250 - SINGLE VOLTAGE FLASH & E3 TM (EMULATED EEPROM)
REGISTER DESCRIPTION (Cont’d)
Bit 2 = WFIS: Wait For Interrupt Status.
If this bit is reset, the WFI instruction puts the
Flash macrocell in Stand-by mode (immediate
read possible, but higher consumption: 100 µA); if
it is set, the WFI instruction puts the Flash macro-
cell in Power-Down mode (recovery time of 10µs
needed before reading, but lower consumption:
10µA). The Stand-by mode or the Power-Down
mode will be entered only at the end of any current
Flash or E^{3 TM} write operation.
In the same way following an HALT or a STOP in-
struction, the Memory enters Power-Down mode
only after the completion of any current write oper-
ation.
0: Flash in Stand-by mode on WFI
1: Flash in Power-Down mode on WFI
Note: HALT or STOP mode can be exited without
problems, but the user should take care when ex-
iting WFI Power Down mode. If WFIS is set, the
user code must reset the XT_DIV16 bit in the
R242 register (page 55) before executing the WFI
instruction. When exiting WFI mode, this gives the
Flash enough time to wake up before the interrupt
vector fetch.
Bit 1 = FEIEN: Flash & E^{3 TM} Interrupt enable.
This bit selects the source of interrupt channel
INTx between the external interrupt pin and the
Flash/E^{3 TM} End of Write interrupt. Refer to the In-
terrupt chapter for the channel number.
0: External interrupt enabled
1: Flash & E^{3 TM} Interrupt enabled
Bit 0 = EBUSY: E^{3 TM} Busy (Read Only).
This bit is automatically set during a Page Update
operation when the first address to be modified is
latched in the E^{3 TM} memory, or during Chip Erase
operation when bit EWMS is set. At the end of the
write operation or during a Sector Erase Suspend
this bit is automatically reset and the memory re-
turns to read mode. When this bit is set every read
access to the E^{3 TM} memory will output invalid data
(FFh equivalent to a NOP instruction), while every
write access to the E^{3 TM} memory will be ignored.
At the end of the write operation this bit is automat-
ically reset and the memory returns to read mode.
Bit EBUSY remains high for a maximum of 10ms
after Power-Up and when exiting Power-Down
mode, meaning that the E^{3 TM} memory is not yet
ready to be accessed.
0: E^{3 TM} not busy
1: E^{3 TM} busy
3.3.2 Status Registers
Two Status Registers (FESR[1:0] are available to
check the status of the current write operation in
Flash and E^{3 TM} memories.
During a Flash or an E^{3 TM} write operation any at-
tempt to read the memory under modification will
output invalid data (FFh equivalent to a NOP in-
struction). This means that the Flash memory is
not fetchable when a write operation is active: the
write operation commands must be given from an-
other memory (E^{3 TM}, internal RAM, or external
memory).
FLASH & E^{3 TM} STATUS REGISTER 0 (FESR0)
Address: 224002h /221002h -Read/Write
Reset value: 0000 0000 (00h)
7
6
5
4
3
2
1
0
FEERR FESS6 FESS5 FESS4 FESS3 FESS2 FESS1 FESS0
Bit 7 = FEERR: Flash or E^{3 TM} write ERRor (Read/
Write).
This bit is set by hardware when an error occurs
during a Flash or an E^{3 TM} write operation. It must
be cleared by software.
0: Write OK
1: Flash or E^{3 TM} write error
Bit 6:0 = FESS[6:0]. Flash and E^{3 TM} Sectors Sta-
tus Bits (Read Only).
These bits are set by hardware and give the status
of the 7 Flash and E^{3 TM} sectors.
– FESS6 = TestFlash and OTP
– FESS5:4 = E^{3 TM} sectors
For 128K and 64K Flash devices:
– FESS3:0 = Flash sectors (F3:0)
For the ST92F250 (256K):
– FESS3 gives the status of F5, F4 and F3 sectors:
the status of all these three sectors are ORed on
this bit
– FESS2:0 = Flash sectors (F2:0)
57/426
9