ST92F124 Datasheet, PDF (380/426 Pages) STMicroelectronics – 8/16-BIT SINGLE VOLTAGE FLASH MCU FAMILY WITH RAM, E3 TMEMULATED EEPROM, CAN 2.0B AND J1850 BLPD

ST92F124/F150/F250 - ELECTRICAL CHARACTERISTICS
FLASH / E^{3 TM} SPECIFICATIONS
(V_DD = 5V ± 10%, T_A = –40°C to +125°C, unless otherwise specified
Parameter
Min
Typ
Byte Program
10
128 kbytes Flash Program
1.3
64 kbytes Flash Sector Erase
1.5
MAIN FLASH
128 kbytes Flash Chip Erase
3
Erase Suspend Latency
Recovery from Power-Down
E^{3 TM}
16 bytes Page Update
(1k E^{3 TM}) -40°C +105°C
30
Flash Endurance 25°C
10000
RELIABILITY
Flash Endurance
E^{3 TM} Endurance
3000
800000 ⁽²⁾
Data Retention
15
Max
Unit
250
µs
4
s
30
s
30
s
15
µs
10
µs
200 ⁽¹⁾
ms
cycles
page updates
years
Note:
(1) The maximum value depends on the number of E3 cycles/sector as shown in Figure 160. This maximum value corresponds to the worst
case E^{3 TM} page update, 1 of 4 consecutive write operations at the same E^{3 TM} address (refer to AN1152). In any case, the page update
operation starts with the write operation of the data (160 µs max). Then, one of the 4 erase operations of the unused sector may be per-
formed, leading to the worst case.
(2) Relational calculation between E^{3 TM} page updates and single byte cycling is provided in a dedicated STMicroelectronics Application
Note (ref. AN1152).
Figure 160. Evolution of Worst Case E3 Page Update Time
Page Update Max
300
T_A=125°C
200
T_A=105°C
100
T_A=25°C
80
400
800 k page updates
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