M58LR128HT Datasheet, PDF (54/112 Pages) STMicroelectronics – 128 Mbit (8 Mb ×16, Multiple Bank, Multilevel interface, Burst) 1.8 V supply Flash memories

Program and erase times and endurance cycles
M58LR128HT, M58LR128HB
Table 17. Program/Erase times and endurance cycles^{(1) (2)} (continued)
Parameter
Condition
Typical after
Min Typ 100kW/E Max Unit
Cycles
Parameter Block (16 KWord)
0.4
Erase
Main Block (64 KWord)
1
Word Program
10
Single Word
Buffer Enhanced
Factory Program⁽⁴⁾
2.5
Buffer Program
80
Buffer (32 Words) _{Buffer Enhanced}
Factory Program
80
Program⁽³⁾
Buffer Program
160
Main Block (64
KWords)
Buffer Enhanced
Factory Program
160
Buffer Program
1.28
Bank (8 Mbits) _{Buffer Enhanced}
Factory Program
1.28
Program/Erase Cycles ^{Main Blocks}
(per Block)
Parameter Blocks
Main Blocks
16
Blank Check
Parameter Blocks
4
2.5 s
4
s
170 µs
µs
µs
µs
ms
ms
s
s
1000 cycles
2500 cycles
ms
ms
1. T_A = –25 to 85 °C; V_DD = 1.7 V to 2 V; V_DDQ = 1.7 V to 2 V.
2. Values are liable to change with the external system-level overhead (command sequence and Status Register polling
execution).
3. Excludes the time needed to execute the command sequence.
4. This is an average value on the entire device.
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