M58LR128HT Datasheet, PDF (1/112 Pages) STMicroelectronics – 128 Mbit (8 Mb ×16, Multiple Bank, Multilevel interface, Burst) 1.8 V supply Flash memories

M58LR128HT
M58LR128HB
128 Mbit (8 Mb ×16, Multiple Bank, Multilevel interface, Burst)
1.8 V supply Flash memories
Features
■ Supply voltage
– V_DD = 1.7 V to 2.0 V for program, erase and
read
– V_DDQ = 1.7 V to 2.0 V for I/O Buffers
– V_PP = 9 V for fast program
■ Synchronous / Asynchronous Read
– Synchronous Burst Read mode: 54 MHz
– Asynchronous Page Read mode
– Random access: 85 ns
■ Synchronous Burst Read Suspend
■ Programming time
– 2.5 µs typical word program time using
Buffer Enhanced Factory Program
command
■ Memory organization
– Multiple Bank memory array: 8 Mbit banks
– Parameter Blocks (top or bottom location)
■ Dual operations
– program/erase in one Bank while read in
others
– No delay between read and write
operations
■ Block locking
– All blocks locked at power-up
– Any combination of blocks can be locked
with zero latency
– WP for Block Lock-Down
– Absolute Write Protection with V_PP = V_SS
■ Security
– 64 bit unique device number
– 2112 bit user programmable OTP Cells
■ Common Flash Interface (CFI)
■ 100 000 program/erase cycles per block
FBGA
VFBGA56 (ZB) 7.7 × 9 mm
■ Electronic signature
– Manufacturer code: 20h
– Top device codes:
M58LR128HT: 88C4h
– Bottom device codes
M58LR128HB: 88C5h
■ VFBGA56 package
– ECOPACK® compliant
February 2007
Rev 1
1/112
www.st.com
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