STE110NS20FD_06 Datasheet, PDF (5/12 Pages) STMicroelectronics – N-channel 200V - 0.022Ω - 110A - ISOTOP MESH OVERLAY™ Power MOSFET

STE110NS20FD
Electrical characteristics
Table 6. Switching times
Symbol
Parameter
t_d(on)
t_r
Turn-on delay time
Rise time
t_r(Voff)
t_f
t_c
Off-voltage rise time
Fall time
Cross-over time
Test condictions
V_DD = 100V, I_D = 50A
R_G = 4.7Ω V_GS = 10V
(see Figure 12)
V_DD = 100V, I_D = 100A,
R_G = 4.7Ω, V_GS = 10V
(see Figure 12)
Min. Typ. Max. Unit
40
ns
130
ns
245
ns
140
ns
220
ns
Table 7. Source drain diode
Symbol
Parameter
Test condictions
Min Typ. Max Unit
I_SD Source-drain current
I_SDM(1) Source-drain current (pulsed)
V_SD(2) Forward on voltage
I_SD = 100A, V_GS = 0
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD=100A, Tj=150°C
di/dt = 100A/µs,
V_DD=160V, (see Figure 17)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
110 A
440 A
1.6 V
225
ns
1.35
µC
12
A
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