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| STE110NS20FD_06 Datasheet, PDF (4/12 Pages) STMicroelectronics – N-channel 200V - 0.022Ω - 110A - ISOTOP MESH OVERLAY™ Power MOSFET | |||
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Electrical characteristics
2
Electrical characteristics
STE110NS20FD
(TCASE=25°C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Test condictions
Min. Typ. Max. Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 250µA, VGS = 0
200
V
IDSS
IGSS
Zero gate voltage drain
current (VGS = 0)
Gate body leakage current
(VDS = 0)
VDS = Max rating
VDS = Max rating, @125°C
VGS = ± 20V
10 µA
100 µA
±100 nA
VGS(th)
RDS(on)
Gate threshold voltage
Static drain-source on
resistance
VDS = VGS, ID = 250µA
VGS = 10V, ID = 50A
2
3
4
V
0.022 0.024 â¦
Table 5. Dynamic
Symbol
Parameter
Test condictions
Min. Typ. Max. Unit
gfs (1)
Forward transconductance
VDS > ID(on) x RDS(on)max,
ID = 50A
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25V, f=1 MHz, VGS=0
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD = 100V, ID = 100A,
VGS = 10V
(see Figure 13)
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
30
S
7900
pF
1500
pF
460
pF
360 504 nC
35
nC
135
nC
4/12
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