STE110NS20FD_06 Datasheet, PDF (3/12 Pages) STMicroelectronics – N-channel 200V - 0.022Ω - 110A - ISOTOP MESH OVERLAY™ Power MOSFET

STE110NS20FD
1
Electrical ratings
Table 1.
Symbol
Absolute maximum ratings
Parameter
V_DS Drain-source voltage (V_GS = 0)
V_DGR Drain-gate voltage (R_GS = 20 kΩ)
V_GS Gate- source voltage
I_D Drain current (continuos) at T_C = 25°C
I_D Drain current (continuos) at T_C = 100°C
I_DM ⁽¹⁾ Drain current (pulsed)
P_TOT Total dissipation at T_C = 25°C
Derating factor
dv/dt ⁽²⁾ Peak diode recovery voltage slope
V_ISO
T_stg
T_j
Insulation winthstand voltage (AC-RMS)
Storage temperature
Max. operating junction temperature
1. Pulse width limited by safe operating area
2. I_SD <110A, di/dt < 200A/µs, V_DD = 80% V_(BR)DSS
Table 2. Thermal resistance
Symbol
Parameter
Rthj-case Thermal resistance junction-case Max
Rthj-amb Thermal resistance junction-ambient Max
T_l
Maximum lead temperature for soldering
purpose
Table 3. Avalanche data
Symbol
Parameter
Avalanche current, repetitive or not-repetitive
I_AR
(pulse width limited by T_j max)
Single pulse avalanche energy
E_{AS (starting Tj = 25 °C, ID = IAR, VDD = 50V)}
Electrical ratings
Value
200
200
±20
110
69
440
500
4
25
2500
–65 to 150
150
Unit
V
V
V
A
A
A
W
W/°C
V/ns
V
°C
°C
Value
0.25
30
300
Value
110
750
Unit
°C/W
°C/W
°C
Unit
A
mJ
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