STE110NS20FD_06 Datasheet, PDF (1/12 Pages) STMicroelectronics – N-channel 200V - 0.022Ω - 110A - ISOTOP MESH OVERLAY™ Power MOSFET

STE110NS20FD
N-channel 200V - 0.022Ω - 110A - ISOTOP
MESH OVERLAY™ Power MOSFET
General features
Type
STE110NS20FD
V_DSS
200V
R_DS(on)
<0.024Ω
I_D
110A
■ Extremely high dv/dt capability
■ 100% avalanche tested
■ Gate charge minimized
■ ± 20V gate to source voltage rating
■ Low intrinsic capacitance
■ Fast body-drain diode:low trr, Qrr
Description
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an
advanced family of Power MOSFETs with
outstanding performances. The new patented
STrip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest R_DS(ON) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
Applications
■ Switching application
ISOTOP
Internal schematic diagram
Order codes
Part number
STE110NS20FD
Marking
E110NS20FD
Package
ISOTOP
Packaging
Tube
May 2006
Rev 3
1/12
www.st.com
12