STD8NM60N Datasheet, PDF (5/17 Pages) STMicroelectronics – N-channel 600 V - 0.56 Ω - 7 A - TO-220 - TO-220FP - IPAK - DPAK second generation MDmesh™ Power MOSFET

STD8NM60N - STD8NM60N-1 - STF8NM60N - STP8NM60N
Electrical characteristics
Table 7. Switching times
Symbol
Parameter
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
Min. Typ. Max. Unit
V_DD = 300 V, I_D = 3.5 A,
10
ns
R_G = 4.7 Ω, V_GS = 10 V
12
ns
(see Figure 18),
40
ns
(see Figure 23)
10
ns
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min.
I_SD
I_SDM ⁽¹⁾
V_SD(2)
t_rr
Q_rr
I_RRM
t_rr
Q_rr
I_RRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
I_SD = 7 A, V_GS = 0
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 7 A, di/dt = 100
A/µs, V_DD = 30 V, Tj = 25
°C (see Figure 20)
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 7A, di/dt = 100
A/µs, V_DD = 30 V,
Tj=150°C
(see Figure 20)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Typ.
310
2.40
15
480
3.50
15
Max. Unit
7
A
28 A
1.3 V
ns
µC
A
ns
µC
A
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