STD8NM60N Datasheet, PDF (1/17 Pages) STMicroelectronics – N-channel 600 V - 0.56 Ω - 7 A - TO-220 - TO-220FP - IPAK - DPAK second generation MDmesh™ Power MOSFET

STD8NM60N - STD8NM60N-1
STF8NM60N - STP8NM60N
N-channel 600 V - 0.56 Ω - 7 A - TO-220 - TO-220FP - IPAK - DPAK
second generation MDmesh™ Power MOSFET
Features
Type
V_DSS
(@Tjmax)
R_DS(on)
max
I_D
STD8NM60N
STD8NM60N-1
STF8NM60N
STP8NM60N
650 V
650 V
650 V
650 V
<0.65 Ω
<0.65 Ω
<0.65 Ω
<0.65 Ω
7A
7A
7 A⁽¹⁾
7A
1. Limited only by maximum temperature allowed
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
■ Switching applications
Description
This series of devices implements second
generation MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the Company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
3
2
1
TO-220
3
2
1
IPAK
3
1
DPAK
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
Marking
STD8NM60N
STD8NM60N-1
STF8NM60N
STP8NM60N
D8NM60N
D8NM60N-1
F8NM60N
P8NM60N
Package
DPAK
IPAK
TO-220FP
TO-220
Packaging
Tape & reel
Tube
Tube
Tube
January 2008
Rev 2
1/17
www.st.com
17