STD8NM60N Datasheet, PDF (3/17 Pages) STMicroelectronics – N-channel 600 V - 0.56 Ω - 7 A - TO-220 - TO-220FP - IPAK - DPAK second generation MDmesh™ Power MOSFET

STD8NM60N - STD8NM60N-1 - STF8NM60N - STP8NM60N
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
TO-220
DPAK/IPAK
TO-220FP
V_DS
Drain-source voltage (V_GS = 0)
V_GS Gate-source voltage
I_D
Drain current (continuous) at T_C = 25 °C
I_D
Drain current (continuous) at T_C = 100 °C
I_DM ⁽²⁾ Drain current (pulsed)
P_TOT Total dissipation at T_C = 25 °C
V_ISO
dv/dt ⁽³⁾
Insulation withstand voltage (RMS) from all three
leads to external heat sink (t = 1 s;T_C = 25 °C)
Peak diode recovery voltage slope
T_j
Operating junction temperature
T_stg
Storage temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I_SD ≤ 7A, di/dt ≤ 400A/µs, V_DD = 80% V_(BR)DSS
600
± 25
7
7 ⁽¹⁾
4.3
4.3 ⁽¹⁾
28
28 ⁽¹⁾
70
25
--
2500
15
-55 to 150
Unit
V
V
A
A
A
W
V
V/ns
°C
Table 3. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case
Rthj-amb Thermal resistance junction-amb
T_l
Maximum lead temperature for soldering
purpose
Value
TO-220
DPAK/IPAK
TO-220FP
Unit
1.78
5
62.5
°C/W
°C/W
300
°C
Table 4. Avalanche characteristics
Symbol
Parameter
I_AS
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
Single pulse avalanche energy
E_AS
(starting Tj = 25 °C, I_D = I_AS, V_DD = 50 V)
Max value
Unit
2.5
A
200
mJ
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